| PART |
Description |
Maker |
| HYMD232646B8-H HYMD232646B8-K HYMD232646B8-L HYMD2 |
Unbuffered DDR SDRAM DIMM
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
32Mx64|2.5V|M/K/H/L|x8|DDR SDRAM - Unbuffered DIMM 256MB 32Mx64 | 2.5V的| /升| x8 | DDR SDRAM内存- 256MB的无缓冲DIMM
|
Hynix Semiconductor
http://
|
| W3EG6432S265D3 |
256MB - 32Mx64 DDR SDRAM UNBUFFERED
|
White Electronic Designs Corporation
|
| HYB25D256400BC-6 HYB25D256400BC-7 HYB25D256400BT-7 |
DDR SDRAM Components - 256Mb (64Mx4) FBGA DDR333 (2.5-3-3)
DDR SDRAM Components - 256Mb (64Mx4) FBGA DDR266A (2-3-3)
DDR SDRAM Components - 256Mbit (64Mx4) DDR266A (2-3-3)
DDR SDRAM Components - 256Mb (16Mx16) FBGA DDR333 (2.5-3-3)
DDR SDRAM Components - 256Mb (16Mx16) FBGA DDR266A (2-3-3)
DDR SDRAM Components - 256Mbit (16Mx16) DDR333 (2.5-3-3)
DDR SDRAM Components - 256Mbit (16Mx16) DDR266A (2-3-3)
DDR SDRAM Components - 256Mb (32Mx8) FBGA DDR333 (2.5-3-3)
DDR SDRAM Components - 256Mbit (32Mx8) DDR333 (2.5-3-3)
DDR SDRAM Components - 256Mb (32Mx8) FBGA DDR266A (2-3-3)
DDR SDRAM Components - 256Mb (62Mx4) DDR266 (2-2-2)
|
Infineon
|
| W3DG6433V-JD1 W3DG6433VXXXJD1MF W3DG6433VXXXJD1MG |
256MB - 32Mx64 SDRAM, UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYM72V32636BLT8-K HYM72V32636BT8-K HYM72V32636BLT8 |
SDRAM - Unbuffered DIMM 256MB
SDRAM|32MX64|CMOS|DIMM|168PIN|PLASTIC
|
Hynix Semiconductor
|
| 256MBDDRSDRAM K4H561638B K4H560838B K4H560438B |
256Mb DDR SDRAM
DDRSDRAMSpecificationVersion0.3
DDR SDRAM Specification Version 0.3
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM
300MHz 2.8V 4M x 32 DDR SDRAM
333MHz 2.8V 4M x 32 DDR SDRAM
350MHz 2.8V 4M x 32 DDR SDRAM
4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
|
ETRON[Etron Technology, Inc.]
Etron Technology Inc.
ETRON[Etron Technology Inc.]
|
| HYMD532646A6-H HYMD532646A6-K HYMD532646A6-L HYMD5 |
DDR SDRAM - Unbuffered DIMM 256MB
Unbuffered DDR SDRAM DIMM
32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
Hynix Semiconductor
HYNIX SEMICONDUCTOR INC
|
| HYS72D16000GR HYS72D16000GR-7-A HYS72D16000GR-8-A |
DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank
Registered DDR SDRAM-Modules
|
Infineon Technologies AG
|
